%0 Journal Article %1 journals/mr/FontserePPBCCM12 %A Fontserè, Abel %A Pérez-Tomás, A. %A Placidi, M. %A Baron, N. %A Chenot, S. %A Cordier, Y. %A Moreno, J. C. %D 2012 %J Microelectronics Reliability %K dblp %N 11 %P 2547-2550 %T Reverse current thermal activation of AlGaN/GaN HEMTs on Si(1 1 1). %U http://dblp.uni-trier.de/db/journals/mr/mr52.html#FontserePPBCCM12 %V 52

@article{journals/mr/FontserePPBCCM12, added-at = {2012-11-15T00:00:00.000+0100}, author = {Fontserè, Abel and Pérez-Tomás, A. and Placidi, M. and Baron, N. and Chenot, S. and Cordier, Y. and Moreno, J. C.}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2c85e8087ca24142f4e21440449544a21/dblp}, ee = {http://dx.doi.org/10.1016/j.microrel.2012.05.017}, interhash = {b07b90c2dde2165b4624be14fabbfe2f}, intrahash = {c85e8087ca24142f4e21440449544a21}, journal = {Microelectronics Reliability}, keywords = {dblp}, number = 11, pages = {2547-2550}, timestamp = {2016-02-02T02:01:07.000+0100}, title = {Reverse current thermal activation of AlGaN/GaN HEMTs on Si(1 1 1).}, url = {http://dblp.uni-trier.de/db/journals/mr/mr52.html#FontserePPBCCM12}, volume = 52, year = 2012 }