%0 Conference Paper %1 conf/iscas/SunK11 %A Sun, Yanan %A Kursun, Volkan %B ISCAS %D 2011 %I IEEE %K dblp %P 2513-2516 %T Leakage current and bottom gate voltage considerations in developing maximum performance 16nm N-channel carbon nanotube transistors. %U http://dblp.uni-trier.de/db/conf/iscas/iscas2011.html#SunK11 %@ 978-1-4244-9472-9

@inproceedings{conf/iscas/SunK11, added-at = {2011-07-07T00:00:00.000+0200}, author = {Sun, Yanan and Kursun, Volkan}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2597d1c8ff55a740a07ca14bfe1580220/dblp}, booktitle = {ISCAS}, crossref = {conf/iscas/2011}, ee = {http://dx.doi.org/10.1109/ISCAS.2011.5938115}, interhash = {9e26848f117d07085b2e18205fa3bc95}, intrahash = {597d1c8ff55a740a07ca14bfe1580220}, isbn = {978-1-4244-9472-9}, keywords = {dblp}, pages = {2513-2516}, publisher = {IEEE}, timestamp = {2016-05-21T09:36:11.000+0200}, title = {Leakage current and bottom gate voltage considerations in developing maximum performance 16nm N-channel carbon nanotube transistors.}, url = {http://dblp.uni-trier.de/db/conf/iscas/iscas2011.html#SunK11}, year = 2011 }