%0 Journal Article %1 journals/tie/ZhangG22 %A Zhang, Ao %A Gao, Jianjun %D 2022 %J IEEE Trans. Ind. Electron. %K dblp %N 7 %P 7255-7262 %T Scalable p-i-n Diode Modeling and Parameter Extraction for Use in the Design of W-Band GaAs Switch. %U http://dblp.uni-trier.de/db/journals/tie/tie69.html#ZhangG22 %V 69

@article{journals/tie/ZhangG22, added-at = {2022-03-15T00:00:00.000+0100}, author = {Zhang, Ao and Gao, Jianjun}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2dff066ef94235b707ce42417fa8f1446/dblp}, ee = {https://doi.org/10.1109/TIE.2021.3095797}, interhash = {8f340bdf8531d8ebb8a2a8eac99f76a7}, intrahash = {dff066ef94235b707ce42417fa8f1446}, journal = {IEEE Trans. Ind. Electron.}, keywords = {dblp}, number = 7, pages = {7255-7262}, timestamp = {2022-06-02T06:09:28.000+0200}, title = {Scalable p-i-n Diode Modeling and Parameter Extraction for Use in the Design of W-Band GaAs Switch.}, url = {http://dblp.uni-trier.de/db/journals/tie/tie69.html#ZhangG22}, volume = 69, year = 2022 }