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%0 Conference Paper
%1 conf/isscc/LeeCCKCOLKPWPRCKKSLCCCKYJJKKK07
%A Lee, KwangJin
%A Cho, Beak-Hyung
%A Cho, Woo-Yeong
%A Kang, Sangbeom
%A Choi, Byung-Gil
%A Oh, Hyung-Rok
%A Lee, Changsoo
%A Kim, Hye-Jin
%A min Park, Joon
%A Wang, Qi
%A Park, Mu-Hui
%A Ro, Yu-Hwan
%A Choi, Joon-Yong
%A Kim, Ki-Sung
%A Kim, Young-Ran
%A Shin, In-Cheol
%A won Lim, Ki
%A Cho, Ho-Keun
%A Choi, ChangHan
%A ryul Chung, Won
%A Kim, Du-Eung
%A Yu, Kwang-Suk
%A Jeong, Gitae
%A Jeong, Hongsik
%A Kwak, Choong-Keun
%A Kim, Chang-Hyun
%A Kim, Kinam
%B ISSCC
%D 2007
%I IEEE
%K dblp
%P 472-616
%T A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput.
%U http://dblp.uni-trier.de/db/conf/isscc/isscc2007.html#LeeCCKCOLKPWPRCKKSLCCCKYJJKKK07
%@ 1-4244-0853-9
@inproceedings{conf/isscc/LeeCCKCOLKPWPRCKKSLCCCKYJJKKK07,
added-at = {2022-02-25T00:00:00.000+0100},
author = {Lee, KwangJin and Cho, Beak-Hyung and Cho, Woo-Yeong and Kang, Sangbeom and Choi, Byung-Gil and Oh, Hyung-Rok and Lee, Changsoo and Kim, Hye-Jin and min Park, Joon and Wang, Qi and Park, Mu-Hui and Ro, Yu-Hwan and Choi, Joon-Yong and Kim, Ki-Sung and Kim, Young-Ran and Shin, In-Cheol and won Lim, Ki and Cho, Ho-Keun and Choi, ChangHan and ryul Chung, Won and Kim, Du-Eung and Yu, Kwang-Suk and Jeong, Gitae and Jeong, Hongsik and Kwak, Choong-Keun and Kim, Chang-Hyun and Kim, Kinam},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/28b9c2fa0123190e8061cab491bc284b7/dblp},
booktitle = {ISSCC},
crossref = {conf/isscc/2007},
ee = {https://doi.org/10.1109/ISSCC.2007.373499},
interhash = {8513a04dbe74a308faf1b96416dd4313},
intrahash = {8b9c2fa0123190e8061cab491bc284b7},
isbn = {1-4244-0853-9},
keywords = {dblp},
pages = {472-616},
publisher = {IEEE},
timestamp = {2022-03-01T07:20:17.000+0100},
title = {A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput.},
url = {http://dblp.uni-trier.de/db/conf/isscc/isscc2007.html#LeeCCKCOLKPWPRCKKSLCCCKYJJKKK07},
year = 2007
}