%0 Conference Paper %1 conf/iscas/HeidariNTD16 %A Heidari, Hadi %A Navaraj, William Taube %A Toldi, Gergely %A Dahiya, Ravinder %B ISCAS %D 2016 %I IEEE %K dblp %P 1358-1361 %T Device modelling of bendable MOS transistors. %U http://dblp.uni-trier.de/db/conf/iscas/iscas2016.html#HeidariNTD16 %@ 978-1-4799-5341-7

@inproceedings{conf/iscas/HeidariNTD16, added-at = {2019-09-25T00:00:00.000+0200}, author = {Heidari, Hadi and Navaraj, William Taube and Toldi, Gergely and Dahiya, Ravinder}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2a9a75c3447a7e0fed99ed8fd13c39161/dblp}, booktitle = {ISCAS}, crossref = {conf/iscas/2016}, ee = {https://doi.org/10.1109/ISCAS.2016.7527501}, interhash = {80e19abe8186f3480d5415fed8b2ae3c}, intrahash = {a9a75c3447a7e0fed99ed8fd13c39161}, isbn = {978-1-4799-5341-7}, keywords = {dblp}, pages = {1358-1361}, publisher = {IEEE}, timestamp = {2019-09-27T20:29:08.000+0200}, title = {Device modelling of bendable MOS transistors.}, url = {http://dblp.uni-trier.de/db/conf/iscas/iscas2016.html#HeidariNTD16}, year = 2016 }