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%0 Journal Article
%1 journals/mr/ChakrabortyLK02
%A Chakraborty, S.
%A Lai, P. T.
%A Kwok, Paul C. K.
%D 2002
%J Microelectronics Reliability
%K dblp
%N 3
%P 455-458
%T MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC.
%U http://dblp.uni-trier.de/db/journals/mr/mr42.html#ChakrabortyLK02
%V 42
@article{journals/mr/ChakrabortyLK02,
added-at = {2007-03-27T00:00:00.000+0200},
author = {Chakraborty, S. and Lai, P. T. and Kwok, Paul C. K.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/29b00d85ec832cf0704f1a36caa2bf2a8/dblp},
ee = {http://dx.doi.org/10.1016/S0026-2714(01)00220-7},
interhash = {70f44d78836c2793c3c2e1a60c581654},
intrahash = {9b00d85ec832cf0704f1a36caa2bf2a8},
journal = {Microelectronics Reliability},
keywords = {dblp},
number = 3,
pages = {455-458},
timestamp = {2016-02-02T02:00:53.000+0100},
title = {MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC.},
url = {http://dblp.uni-trier.de/db/journals/mr/mr42.html#ChakrabortyLK02},
volume = 42,
year = 2002
}