%0 Conference Paper %1 9178169 %A Munoz Baron, K. %A Sharma, K. %A Nitzsche, M. %A Ziegler, P. %A Koch, D. %A Kallfass, I. %B PCIM Europe digital days 2020; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management %D 2020 %K %P 1-7 %T Characterization of Threshold Voltage for Application-Oriented Power Cycling Conditions for Wide-Bandgap Power Devices %U https://ieeexplore.ieee.org/document/9178169 %X A quasi-threshold voltage measurement setup is implemented in a test bench to allow online parameter observation during power cycling tests for silicon carbide MOSFETs. The threshold voltage is known to change during operation, either temporarily or non-reversibly, due to degradation and trapping phenomena in the MOS-structure. To evaluate different assembly and interconnection technologies, for conditions as close to the real application as possible, an application-oriented power cycling test setup is examined. The proposed test bench allows the measurement of a quasi-threshold voltage under the influence of different off-state drain-source and gate voltages. Measurements show a decrease of quasi-threshold voltage with increasing off-state drain-source voltage and negative gate-source voltage.

@inproceedings{9178169, abstract = {A quasi-threshold voltage measurement setup is implemented in a test bench to allow online parameter observation during power cycling tests for silicon carbide MOSFETs. The threshold voltage is known to change during operation, either temporarily or non-reversibly, due to degradation and trapping phenomena in the MOS-structure. To evaluate different assembly and interconnection technologies, for conditions as close to the real application as possible, an application-oriented power cycling test setup is examined. The proposed test bench allows the measurement of a quasi-threshold voltage under the influence of different off-state drain-source and gate voltages. Measurements show a decrease of quasi-threshold voltage with increasing off-state drain-source voltage and negative gate-source voltage.}, added-at = {2023-08-31T14:11:14.000+0200}, author = {{Munoz Baron}, K. and {Sharma}, K. and {Nitzsche}, M. and {Ziegler}, P. and {Koch}, D. and {Kallfass}, I.}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2bda86078b90f0186d20dfb3436352892/puma-wartung}, booktitle = {PCIM Europe digital days 2020; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management}, interhash = {16886b486b5ee0102097f6797fca7ad1}, intrahash = {bda86078b90f0186d20dfb3436352892}, keywords = {}, month = {July}, pages = {1-7}, timestamp = {2023-08-31T12:11:14.000+0200}, title = {Characterization of Threshold Voltage for Application-Oriented Power Cycling Conditions for Wide-Bandgap Power Devices}, url = {https://ieeexplore.ieee.org/document/9178169}, year = 2020 }