%0 Journal Article %1 journals/tcom/AslamGC16 %A Aslam, Chaudhry Adnan %A Guan, Yong Liang %A Cai, Kui %D 2016 %J IEEE Trans. Communications %K dblp %N 4 %P 1613-1623 %T Read and Write Voltage Signal Optimization for Multi-Level-Cell (MLC) NAND Flash Memory. %U http://dblp.uni-trier.de/db/journals/tcom/tcom64.html#AslamGC16 %V 64

@article{journals/tcom/AslamGC16, added-at = {2016-04-25T00:00:00.000+0200}, author = {Aslam, Chaudhry Adnan and Guan, Yong Liang and Cai, Kui}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2621a5e81d1baf03cdb2aa2659adf6872/dblp}, ee = {http://dx.doi.org/10.1109/TCOMM.2016.2533498}, interhash = {4dd8edd7dda3a64aa64c0c626133c0c0}, intrahash = {621a5e81d1baf03cdb2aa2659adf6872}, journal = {IEEE Trans. Communications}, keywords = {dblp}, number = 4, pages = {1613-1623}, timestamp = {2016-04-26T09:32:11.000+0200}, title = {Read and Write Voltage Signal Optimization for Multi-Level-Cell (MLC) NAND Flash Memory.}, url = {http://dblp.uni-trier.de/db/journals/tcom/tcom64.html#AslamGC16}, volume = 64, year = 2016 }