%0 Journal Article %1 journals/jssc/TessmannLHBJMCM19 %A Tessmann, Axel %A Leuther, Arnulf %A Heinz, Felix %A Bernhardt, Frank %A John, Laurenz %A Massler, Hermann %A Czornomaz, Lukas %A Merkle, Thomas %D 2019 %J J. Solid-State Circuits %K dblp %N 9 %P 2411-2418 %T 20-nm In0.8Ga0.2As MOSHEMT MMIC Technology on Silicon. %U http://dblp.uni-trier.de/db/journals/jssc/jssc54.html#TessmannLHBJMCM19 %V 54

@article{journals/jssc/TessmannLHBJMCM19, added-at = {2019-09-05T00:00:00.000+0200}, author = {Tessmann, Axel and Leuther, Arnulf and Heinz, Felix and Bernhardt, Frank and John, Laurenz and Massler, Hermann and Czornomaz, Lukas and Merkle, Thomas}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2c4742210da545083a65dd272a5b341f7/dblp}, ee = {https://doi.org/10.1109/JSSC.2019.2915161}, interhash = {3dc96dc7118274f808a97992659aa2a3}, intrahash = {c4742210da545083a65dd272a5b341f7}, journal = {J. Solid-State Circuits}, keywords = {dblp}, number = 9, pages = {2411-2418}, timestamp = {2019-09-27T06:09:17.000+0200}, title = {20-nm In0.8Ga0.2As MOSHEMT MMIC Technology on Silicon.}, url = {http://dblp.uni-trier.de/db/journals/jssc/jssc54.html#TessmannLHBJMCM19}, volume = 54, year = 2019 }