Article,

Three-dimensional imaging of integrated-circuit activity using quantum defects in diamond

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Phys. Rev. Appl., 21 (1): 014055 (January 2024)
DOI: 10.1103/PhysRevApplied.21.014055

Abstract

Three-dimensional semiconductor chip architectures promise high-density memory and much faster computation, but self-heating and leakage currents still severely limit performance. While current-density mapping is crucial to studying these issues in situ, nondestructive imaging has been limited to two dimensions. The authors use ensembles of nitrogen-vacancy centers in diamond as nanoscale quantum sensors to probe all three vectorial components of magnetic fields associated with electric currents, for noninvasive imaging of three-dimensional currents in multilayer integrated circuits. Further improvements could reveal the local conductance of materials, to advance condensed matter physics.

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