Abstract
Silicon nitride membrane based cryogenic bolometers exhibit high sensitivity and enable ultra-sensitive detector applications. Multi-pixel instruments were already introduced as devices for submillimeter-wave imaging. Nevertheless, the numbers of pixels are limited by the readout process which is typically a time-division multiplexing or code-division multiplexing technique. To overcome this challenge, a replacement of the transition-edge sensor as thermometer by a lumped-element resonance circuit seems to be a promising solution. Therefore, one can benefit from the intrinsic capability of frequency-division multiplexing that allows the readout of large detector arrays simultaneously and in real-time. The number of pixels is then limited by the available readout bandwidth and the quality factors of each individual resonance circuit. We successfully demonstrated, based on our feasibility study, the principal operation of such a device, what we call kinetic-inductance bolometer (KIBO). But the overall performance of the achievable noise-equivalent power (NEP) was limited by implementation and operation temperature of KIBO. Therefore, improved KIBO designs were developed and fabricated with niobium thin-film technology. In this paper, we describe the improvement procedure and estimate the expected NEP value.
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