%0 Journal Article %1 journals/mr/BeylierBBG07 %A Beylier, G. %A Bruyère, S. %A Benoit, D. %A Ghibaudo, Gérard %D 2007 %J Microelectronics Reliability %K dblp %N 4-5 %P 743-747 %T Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride. %U http://dblp.uni-trier.de/db/journals/mr/mr47.html#BeylierBBG07 %V 47

@article{journals/mr/BeylierBBG07, added-at = {2019-07-10T00:00:00.000+0200}, author = {Beylier, G. and Bruyère, S. and Benoit, D. and Ghibaudo, Gérard}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/228e6d941bf4c337f344eb01dbaf97342/dblp}, ee = {https://doi.org/10.1016/j.microrel.2007.01.005}, interhash = {1a6eeed0f70135675517e87565f0b82a}, intrahash = {28e6d941bf4c337f344eb01dbaf97342}, journal = {Microelectronics Reliability}, keywords = {dblp}, number = {4-5}, pages = {743-747}, timestamp = {2019-09-27T10:58:24.000+0200}, title = {Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride.}, url = {http://dblp.uni-trier.de/db/journals/mr/mr47.html#BeylierBBG07}, volume = 47, year = 2007 }