%0 Conference Paper %1 lang1993phenomenological %A Lang, Walter %A Steiner, P. %A Kozlowski, F. %A Sandmaier, Hermann %B Silicon based optoelectronic materials %C Pittsburgh, Pa. %D 1993 %E Tischler, M. A. %K %N 298 %P 397-402 %R 10.1557/PROC-298-397 %T A phenomenological investigation on porous silicon elecroluminescence %X The processing of light emitting diodes in porous silicon with green/blue electroluminescence spectrum is described. The spectral behaviour and the degradation are investigated. A phenomenological theory for the luminescence is given. The fabrication and properties of a light-emitting porous silicon device incorporating a p-n junction are presented. By means of a selective anodization of a sandwich of p+ on n-substrate, a nanoporous recombination region within the p-n junction is formed. The device shows rectifying characteristics with a considerable series resistance. When driven under forward bias, the diode emits bright light with linear dependence on the current. The measured external quantum efficiency is of the order of 10high-2 percent. The internal quantum efficiency should be at least one order of magnitude higher. %@ 1-558-99194-8

@inproceedings{lang1993phenomenological, abstract = {The processing of light emitting diodes in porous silicon with green/blue electroluminescence spectrum is described. The spectral behaviour and the degradation are investigated. A phenomenological theory for the luminescence is given. The fabrication and properties of a light-emitting porous silicon device incorporating a p-n junction are presented. By means of a selective anodization of a sandwich of p+ on n-substrate, a nanoporous recombination region within the p-n junction is formed. The device shows rectifying characteristics with a considerable series resistance. When driven under forward bias, the diode emits bright light with linear dependence on the current. The measured external quantum efficiency is of the order of 10high-2 percent. The internal quantum efficiency should be at least one order of magnitude higher.}, added-at = {2023-09-01T10:42:01.000+0200}, address = {Pittsburgh, Pa.}, author = {Lang, Walter and Steiner, P. and Kozlowski, F. and Sandmaier, Hermann}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2dcf2e17d7dd1d3754d09c803c3ef1618/unibiblio-4}, booktitle = {Silicon based optoelectronic materials}, doi = {10.1557/PROC-298-397}, editor = {Tischler, M. A.}, eventdate = {1993-04-12/1993-04-14}, eventtitle = {Materials Research Society, Symposium "Silicon based optoelectronic materials"}, interhash = {0c49313c03290e078aa5dafaa14ba130}, intrahash = {dcf2e17d7dd1d3754d09c803c3ef1618}, isbn = {1-558-99194-8}, keywords = {}, language = {eng}, number = 298, pages = {397-402}, series = {Materials Research Society symposium proceedings : MRSSP / Materials Research Society}, timestamp = {2023-09-01T08:42:01.000+0200}, title = {A phenomenological investigation on porous silicon elecroluminescence}, venue = {San Francisco, California, USA}, year = 1993 }