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Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures.

C. Dou, D. Lin, A. Vais, T. Ivanov, H. Chen, K. Martens, K. Kakushima, H. Iwai, Y. Taur, A. Thean, and G. Groeseneken. Microelectronics Reliability, 54 (4): 746-754 (2014)

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Durability evaluation of hexagonal WO3 electrode for lithium ion secondary batteries.A. Sasaki, H. Oozu, M. Nakamura, K. Aoki, Y. Kataoka, S. Saito, K. Kobayashi, W. Li, K. Kakushima, K. Tsutsui and 1 other author(s). Microelectronics Reliability, (2017)Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack.P. Ahmet, K. Nakagawa, K. Kakushima, H. Nohira, K. Tsutsui, N. Sugii, T. Hattori, and H. Iwai. Microelectronics Reliability, 48 (11-12): 1769-1771 (2008)Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors.S. Sato, K. Kakushima, P. Ahmet, K. Ohmori, K. Natori, K. Yamada, and H. Iwai. Microelectronics Reliability, 51 (5): 879-884 (2011)Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures.C. Dou, D. Lin, A. Vais, T. Ivanov, H. Chen, K. Martens, K. Kakushima, H. Iwai, Y. Taur, A. Thean and 1 other author(s). Microelectronics Reliability, 54 (4): 746-754 (2014)Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes.W. Li, A. Sasaki, H. Oozu, K. Aoki, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui and 2 other author(s). Microelectronics Reliability, 55 (2): 402-406 (2015)Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement.C. Dou, T. Shoji, K. Nakajima, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui and 2 other author(s). Microelectronics Reliability, 54 (4): 725-729 (2014)On the current conduction mechanisms of CeO2/La2O3 stacked gate dielectric.X. Feng, H. Wong, B. Yang, S. Dong, H. Iwai, and K. Kakushima. Microelectronics Reliability, 54 (6-7): 1133-1136 (2014)Improving the electrical characteristics of MOS transistors with CeO2/La2O3 stacked gate dielectric.B. Yang, H. Wong, K. Kakushima, and H. Iwai. Microelectronics Reliability, 52 (8): 1613-1616 (2012)Equivalent Noise Temperature Representation for Scaled MOSFETs.H. Shimomura, K. Kakushima, and H. Iwai. IEICE Transactions, 93-C (10): 1550-1552 (2010)Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT.T. Kawanago, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, and H. Iwai. ESSDERC, page 107-110. IEEE, (2013)