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A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability., , , , , , , , , and 4 other author(s). Microelectronics Reliability, (2018)Analytic variability study of inference accuracy in RRAM arrays with a binary tree winner-take-all circuit for neuromorphic applications., , , , , , and . ESSDERC, page 62-65. IEEE, (2018)Yield prediction for architecture exploration in nanometer technology nodes: : a model and case study for memory organizations., , , , and . CODES+ISSS, page 253-258. ACM, (2006)Method to assess the impact of LER and spacing variation on BEOL dielectric reliability using 2D-field simulations for <20nm spacing., , , , , and . IRPS, page 10-1. IEEE, (2018)The defect-centric perspective of device and circuit reliability - From individual defects to circuits., , , , , , , , , and 5 other author(s). ESSDERC, page 218-225. IEEE, (2015)Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants., , , , , , , , , and 1 other author(s). ESSDERC, page 262-265. IEEE, (2019)Exponent Monte Carlo for Quick Statistical Circuit Simulation., , , , and . PATMOS, volume 5953 of Lecture Notes in Computer Science, page 36-45. Springer, (2009)Variability aware modeling for yield enhancement of SRAM and logic., , , and . DATE, page 1153-1158. IEEE, (2011)Editing First-Order Proofs: Programmed Rules vs Derived Rules., , and . SLP, page 92-98. IEEE-CS, (1984)Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies., , , , , , , , , and 6 other author(s). ESSDERC, page 102-105. IEEE, (2014)