Tunnel injection into group IV semiconductors and its application to light-emitting devices. IEEE Photonics Society Summer Topicals Meeting series 2018 (SUM), 29-30, IEEE, Piscataway, NJ, 2018. [PUMA: unibibliografie ubs_30066 ubs_30069 ubs_20007 ubs_10005 ubs_40356 wos mult ubs_40097]
Zero Biased Ge-on-Si Photodetector on a Thin Buffer with a Bandwidth of 3.2GHz at 1300nm. Materials Science in Semiconductor Processing, (8)1-3:423-427, Elsevier, 2005. [PUMA: ubs_30066 sent ubs_30069 ubs_20007 ubs_10005 ubs_40356 mult fis ubs_40097]
Ge-on-Si Vertical Incidence Photodiodes with 39-GHz Bandwidth. IEEE Photonics Technology Letters, (17)7:1510-1512, IEEE, 2005. [PUMA: ubs_30066 sent ubs_30069 ubs_20007 ubs_10005 ubs_40356 mult fis ubs_40097]
SiGe PIN Photodetector for Infrared Optical Fiber Links Operating at 1.25 Gbit/s. Applied Surface Science, (224)1-4:170-174, Elsevier, 2004. [PUMA: ubs_30066 sent ubs_30069 ubs_20007 ubs_10005 ubs_40356 mult fis ubs_40097]
Ge-on-Si p-i-n Photodiodes With a 3-dB Bandwidth of 49 GHz. IEEE Photonics Technology Letters, (21)13:920-922, IEEE, 2009. [PUMA: unibibliografie ubs_30066 sent ubs_30069 ubs_20007 ubs_10005 ubs_40356 mult ubs_40097]
Engineering of Germanium Tunnel Junctions for Optical Applications. IEEE Photonics Journal, (10)22018. [PUMA: unibibliografie ubs_30066 sent ubs_30069 ubs_20007 ubs_10005 ubs_40356 mult ubs_40097]
Electrically pumped lasing from Ge Fabry-Perot resonators on Si. Optics express, (23)11:14815-14822, Optical Society of America, 2015. [PUMA: unibibliografie oa ubs_30066 ubs_30069 ubs_40129 ubs_20007 ubs_10005 hp ubs_20008 mult ubs_40097 ubs_30086]
Ge and GeSn Light Emitters on Si. Gettering and Defect Engineering in Semiconductor Technology XVI, (242):353-360, Trans Tech Publications, 2016. [PUMA: unibibliografie ubs_30066 sent ubs_30069 ubs_20007 ubs_10005 ubs_40356 mult ubs_40097]
High-Speed Germanium Photodiodes Monolithically Integrated on Silicon with MBE. Thin Solid Films, (508)1-2:393-395, Elsevier, 2006. [PUMA: ubs_30066 sent ubs_30069 ubs_20007 ubs_10005 ubs_40356 mult fis ubs_40097]
High Bandwidth Ge p-i-n Photodetector Integrated on Si. Applied Physics Letters, (89)7:071117, AIP Publishing, 2006. [PUMA: ubs_30066 sent ubs_30069 ubs_20007 ubs_10005 ubs_40356 mult fis ubs_40097]
Photocurrent Analysis of a Fast Ge p-i-n Detector on Si. Applied Physics Letters, (91)5:051108, AIP Publishing, 2007. [PUMA: unibibliografie ubs_30066 sent ubs_30069 ubs_20007 ubs_10005 ubs_40356 mult ubs_40097]
Electroluminescence of GeSn/Ge MQW LEDs on Si substrate. Optics letters, (40):3209-3212, Optical Society of America, 2015. [PUMA: unibibliografie ubs_30066 ubs_30069 ubs_20007 ubs_10005 hp mult ubs_40097]