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Approaches for III/V Photonics on Si, , , , , , , , , and . Physics of semiconductors : 30th International Conference on the Physics of Semiconductors . Seoul, Korea, 25 - 30 July 2010, 1399, page 261-262. Melville, New York, AIP, (2010)Ge-on-Si PIN-photodetectors with Al nanoantennas: The effect of nanoantenna size on light scattering into waveguide modes, , , , , , , , , and . Applied Physics Letters, (2016)Characterization of thin Boron layers grown on Silicon utilizing molecular beam epitaxy for ultra-shallow pn-junctions., and . MIPRO, page 7-11. IEEE, (2018)Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures., , , , , , , and . MIPRO, page 55-59. IEEE, (2021)Small-signal IMPATT diode characterization for mm-wave power generation in monolithic scenarios, , , , , , and . 2016 46th European Solid-State Device Research Conference (ESSDERC), page 109-112. IEEE, (2016)Simulation-based optimization of Ge-PIN-photodiodes with Al nanohole arrays for refractive index sensing, , , , , and . 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 0023-0026. IEEE, (2018)The Zener-Emitter : Electron injection by direct-tunneling in Ge LEDs for the on-chip Si light source, , , , , , , , , and . 2016 74th Annual Device Research Conference (DRC), page 1-2. IEEE, (2016)Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis, , , , , , , and . Journal of applied physics, 117 (12): 125706 (2015)An Asymmetrically Doped Vertical Si Biristor With Sub-1-V Operation, , and . IEEE transactions on electron devices, 68 (8): 3728-3733 (2021)An 82-GHz 14.6-mW Output Power Silicon Impact Ionization Avalanche Transit Time Transmitter With Monolithically Integrated Coplanar Waveguide Patch Antenna, , and . IEEE Transactions on Microwave Theory and Techniques, 67 (1): 308-317 (2018)