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Molecular beam epitaxy grown GeSn p-i-n photodetectors integrated on Si

J. Werner, M. Oehme, A. Schirmer, E. Kasper, and J. Schulze. Thin Solid Films, 520 (8): 3361-3364 (2012)
DOI: 10.1016/j.tsf.2011.10.111

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Dr. Michael Oehme University of Stuttgart

Michael Böhm

Michael Funk

Hon. -Prof. Dr. -Ing. Michael Bauer University of Stuttgart

Dr. Michael Wachowsky University of Stuttgart

Other publications of authors with the same name

Epitaxially Grown Indium Phosphide Quantum Dots on a Virtual Ge Substrate Realized on Si(001)M. Wiesner, M. Bommer, W. Schulz, M. Etter, J. Werner, M. Oehme, J. Schulze, M. Jetter, and and Peter Michler. (2012)Structure and composition of Silicon–Germanium–Tin microstructures obtained through Mask Projection assisted Pulsed Laser Induced EpitaxyS. Stefanov, C. Serra, A. Benedetti, J. Conde, J. Werner, M. Oehme, J. Schulze, S. Wirths, D. Buca, and S. Chiussi. Microelectronic Engineering, (August 2014)Contact resistivities of antimony-doped n-type Ge 1− x Sn xV. Srinivasan, I. Fischer, L. Augel, A. Hornung, R. Koerner, K. Kostecki, M. Oehme, E. Rolseth, and J. Schulze. Semiconductor Science and Technology, 31 (8): 08LT01 (2016)Dislocation luminescence in highly doped degenerated germanium at room temperatureT. Arguirov, O. Vyvenko, M. Oehme, J. Schulze, and M. Kittler. physica status solidi c, 10 (1): 56-59 (2013)Special Etch Technologies for Ge/Si DevicesG. Wöhl, M. Oehme, C. Parry, E. Kasper, M. Jutzi, M. Berroth, and E. Voorneman. (2003)High frequency behaviour of Ge pin junctionsE. Kasper, M. Oehme, J. Schulze, S. Klinger, and M. Berroth. International Workshop on New Group IV Semiconductor Nanoelectronics, Digest of papers, page 1--3. Sendai, Japan, (2010)Fast Ge p-i-n Photodetectors on SiE. Kasper, M. Oehme, J. Werner, M. Jutzi, and M. Berroth. International SiGe Technology and Device Meeting, page 1--2. Princeton, NJ, USA, (2006)Weak localization and weak antilocalization in doped Ge1-y Sn y layers with up to 8% SnD. "Weißhaupt, H. "Funk, M. "Kern, M. "Dettling, D. "Schwarz, M. Öehme, C. "Sürgers, J. "van Slageren, I. "Fischer, and J. "Schulze. Journal of Physics: Condensed Matter, 33 (8): 085703 (December 2020)Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor SpintronicsD. Weißhaupt, H. Funk, C. Sürgers, G. Fischer, M. Oehme, D. Schwarz, I. Fischer, J. van Slageren, and J. Schulze. 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), page 45-49. (September 2021)Influence of the modulation doping to the mobility of two-dimensional electron gases in Si/SiGeJ. Werner, M. Oehme, E. Kasper, and J. Schulze. Sixth International Conference on Silicon Epitaxy and Heterostructures, 518, 6, Supplement 1, page S234-S236. Amsterdam, Elsevier, (2010)

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Disambiguation of "Oehme, Michael"

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Molecular beam epitaxy grown GeSn p-i-n photodetectors integrated on Si

Please choose a person to relate this publication to

Dr. Michael Oehme University of Stuttgart

Michael Böhm

Michael Funk

Hon. -Prof. Dr. -Ing. Michael Bauer University of Stuttgart

Dr. Michael Wachowsky University of Stuttgart

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Oehme, Michael"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Molecular beam epitaxy grown GeSn p-i-n photodetectors integrated on Si

Please choose a person to relate this publication to

Dr. Michael Oehme University of Stuttgart

Michael Böhm

Michael Funk

Hon. -Prof. Dr. -Ing. Michael Bauer University of Stuttgart

Dr. Michael Wachowsky University of Stuttgart

Other publications of authors with the same name

Disambiguation

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history of this post
URL
DOI
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Molecular beam epitaxy grown GeSn p-i-n photodetectors integrated on Si