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Optofluidic sensor system with Ge PIN photodetector for CMOS-compatible sensing

L. Augel, F. Berkmann, D. Latta, I. Fischer, S. Bechler, Y. Elogail, K. Kostecki, K. Potje-Kamloth, and J. Schulze. Microfluidics and nanofluidics, 21 (11): 169 (2017)
DOI: 10.1007/s10404-017-2007-3

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Stefan Hecht University of Stuttgart

Determination and comparison of the cut resistance of different fibre ropesS. Hecht, D. Fischer, and R. Schulz. Proceedings of OIPEEC Conference 2024, page 43-59. Organisation Internationale pour l'Etude des Cables (OIPEEC), (April 2024)

Determination and comparison of the cut resistance of different fibre ropesS. Hecht, D. Fischer, and R. Schulz. Proceedings of OIPEEC Conference 2024, page 43-59. Organisation Internationale pour l'Etude des Cables (OIPEEC), (April 2024)Faserseile – neue Methoden der AblegereifeerkennungJ. Keller, F. Stegmaier, and S. Hecht. 31. Internationale Kranfachtagung 2023 - Digitalisierung, Innovation, Produktsicherheit, 31, page 89-98. Arbeitsgruppe Baumaschinen- und Fördertechnik, Ruhr-Universität Bochum, Selbstverlag der Ruhr-Universität Bochum, (May 2023)Auslegung von Seiltrieben – Lebensdauerreduktion durch GegenbiegungK. Wehking, and S. Hecht. LIFT REPORT 42. Jahrg. (2016) Heft 1, (2016)

Stefan Kunert University of Stuttgart

Stefan Schippling University of Stuttgart

Stefan Keuler University of Stuttgart

Dr. -Ing. Stefan Carosella University of Stuttgart

Other publications of authors with the same name

GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHzM. Oehme, K. Kostecki, K. Ye, S. Bechler, K. Ulbricht, M. Schmid, M. Kaschel, M. Gollhofer, R. Körner, W. Zhang and 2 other author(s). Opt. Express, 22 (1): 839--846 (January 2014)Virtual Substrate Technology for Ge1-XSnX Heteroepitaxy on Si SubstratesK. Kostecki, M. Oehme, R. Koerner, D. Widmann, M. Gollhofer, S. Bechler, G. Mussler, D. Buca, E. Kasper, and J. Schulze. ECS Transactions, 64 (6): 811-818 (2014)Luminescence of strained Ge on GeSn virtual substrate grown on Si (001)B. Schwartz, M. Oehme, R. Koerner, S. Bechler, J. Schulze, and M. Kittler. Silicon Photonics XII, 10108, page 101080D. SPIE, (2017)GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHzM. Oehme, K. Kostecki, K. Ye, S. Bechler, K. Ulbricht, M. Schmid, M. Kaschel, M. Gollhofer, R. Körner, W. Zhang and 2 other author(s). Optics Express, 22 (1): 839-846 (2014)Electroluminescence of GeSn/Ge MQW LEDs on Si substrateB. Schwartz, M. Oehme, K. Kostecki, D. Widmann, M. Gollhofer, R. Koerner, S. Bechler, I. Fischer, T. Wendav, E. Kasper and 2 other author(s). Opt. Lett., 40 (13): 3209--3212 (July 2015)Electrically pumped lasing from Ge Fabry-Perot resonators on SiR. Koerner, M. Oehme, M. Gollhofer, M. Schmid, K. Kostecki, S. Bechler, D. Widmann, E. Kasper, and J. Schulze. Opt. Express, 23 (11): 14815--14822 (June 2015)Electroluminescence of GeSn/Ge MQW LEDs on Si substrateB. Schwartz, M. Oehme, K. Kostecki, D. Widmann, M. Gollhofer, R. Körner, S. Bechler, I. Fischer, T. Wendav, E. Kasper and 2 other author(s). Optics letters, (2015)Laser-based Powder Bed Fusion with 16 kWA. Leis, S. Bechler, R. Weber, and T. Graf. Wissenschaftliche Gesellschaft Lasertechnik e.V., (2021)Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111)S. Bechler, M. Kern, H. Funk, G. Colston, I. Fischer, D. Weißhaupt, M. Myronov, J. Slageren, and J. Schulze. Semiconductor science and technology, 33 (9): 095008 (2018)Electrically pumped lasing from Ge Fabry-Perot resonators on SiR. Körner, M. Oehme, M. Gollhofer, M. Schmid, K. Kostecki, S. Bechler, D. Widmann, E. Kasper, and J. Schulze. Optics express, 23 (11): 14815-14822 (2015)