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Poster:Telecom-wavelength single-photon emission of MOVPE-grown InAs QDs, , , , , , and . (2014)Tuning Emission Energy and Fine Structure Splitting in Quantum Dots Emitting in the Telecom O-Band, , , , , , , , , and . AIP Advances, 9 (8): 085112 (2019)Talk:MOVPE grown InAs quantum dots on InGaAs strain reducing layers, , , , and . (2012)Poster:InGaAs quantum dots with high In content for telecommunication applications, , , , , , and . (2014)Single-photon and photon pair emission from MOVPE-grown In(Ga)As quantum dots: shifting the emission wavelength from 1.0 to 1.3 µm, , , , , and . Appl. Phys. B, (2016)Single-photon emission at 1.55 µm from MOVPE-grown InAs quantum dots on InGaAs/ GaAs metamorphic buffers, , , , , , , and . Appl. Phys. Lett., (2017)Poster:Semiconductor Single-Photon Sources Designed for Telecommunication Wavelengths, , , , , , , , and . (2013)Poster:MOVPE-grown InAs Quantum Dots On InGaAs Strain Reducing Layers, , , , and . (2012)Structural and optical properties of InAs/(In)GaAs/GaAs quantum dots with single-photon emission in the telecom C-band up to 77 K, , , , , , , , , and 6 other author(s). Phys. Rev. B, 98 (12): 125407 (September 2018)Structural and optical properties of InAs/(In)GaAs/GaAs quantum dots with single-photon emission in the telecom C-band up to 77 K, , , , , , , , , and 6 other author(s). Phys. Rev. B, B (98): 125407 (2018)