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Disambiguation of "Schulze, Joerg"

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Electrical spin injection and transport in germanium

, , , , , , , , , and . Physical Review B, 84 (12): 125323 (2011)
DOI: 10.1103/PhysRevB.84.125323

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apl. Prof. Dr. -Ing. Jörg Christoph Fehr University of Stuttgart

Univ. -Prof. Dr. -Ing. habil. Jörg Wagner University of Stuttgart

 

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Contact resistivities of antimony-doped n-type Ge 1− x Sn x, , , , , , , , and . Semiconductor Science and Technology, 31 (8): 08LT01 (2016)Context-Aware Adaptation in a Mobile Tour Guide., , , and . CONTEXT, volume 3554 of Lecture Notes in Computer Science, page 210-224. Springer, (2005)Weak localization and weak antilocalization in doped Ge1-y Sn y layers with up to 8% Sn, , , , , , , , , and . Journal of Physics: Condensed Matter, 33 (8): 085703 (December 2020)Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si, , , , , , , , , and 3 other author(s). ACS Photonics, (December 2022)Direct-indirect GeSn band structure formation by laser Radiation: The enhancement of Sn solubility in Ge, , , , , , , , , and 5 other author(s). Optics & Laser Technology, (August 2020)Capacitance-Voltage Measurements on MBE-Grown Ge-SixGe1-x-ySny Heterojunction pn-Diodes for Material Characterisation, , , , and . ECS Transactions, 98 (5): 339-349 (September 2020)Hydrogen-Assisted Molecular Beam Epitaxy of SiGeSn, , , , and . ECS Meeting Abstracts, MA2022-02 (32): 1164 (October 2022)Fully redundant clock generation and distribution with dynamic oscillator switchover., , , , , , , , , and . IBM Journal of Research and Development, 51 (1/2): 145-156 (2007)Electrical characterization of n-doped SiGeSn diodes with high Sn content, , , , , , , , and . Semiconductor Science and Technology, 33 (12): 124017 (2018)Context driven, adaptive tour computation and information presentation., , , , and . MCMP@MDM, volume 165 of CEUR Workshop Proceedings, CEUR-WS.org, (2005)