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A 27 GHz 20 ps PNP technology

J. Warnock, P. Lu, T. Chen, K. Toh, J. Cressler, K. Jenkins, D. Tang, J. Burghartz, J. Sun, C. Chuang, G. Li, and T. Ning. Technical digest : International Electron Devices Meeting 1989, IEDM, Washington, D.C. December 3 - 6, 1989, page 903-905. Piscataway, New Jersey, IEEE, (1989)
DOI: 10.1109/IEDM.1989.74201

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Other publications of authors with the same name

A Full E-Beam 0.25 um Bipolar Technology With Sub-25 Ps ECL Gate DelayJ. Warnock, J. Cressler, P. Coane, K. Chiong, M. Rothwell, K. Jenkins, J. Burghartz, E. Petrillo, N. Mazzeo, A. Megdanis and 4 other author(s). International Electron Devices Meeting (1991 : Washington, DC), page 956-958. Piscataway, New Jersey, IEEE, (1991)250-600 Mhz 12b digital filters in 0.8-0.25um Bulk and SOI CMOS technologies.L. Thon, G. Shahidi, W. Rausch, G. Coleman, D. Tang, D. Schepis, R. Schulz, and F. Assadaraghi. ISLPED, page 89-92. IEEE, (1996)A Scaled 0.25-Μm Bipolar Technology Using Full E-Beam LithographyJ. Cressler, J. Warnock, P. Coane, K. Chiong, M. Rothwell, K. Jenkins, J. Burghartz, E. Petrillo, N. Mazzeo, A. Megdanis and 4 other author(s). IEEE Electron Device Letters, 13 (5): 262-264 (1992)A 27 GHz 20 ps PNP technologyJ. Warnock, P. Lu, T. Chen, K. Toh, J. Cressler, K. Jenkins, D. Tang, J. Burghartz, J. Sun, C. Chuang and 2 other author(s). Technical digest : International Electron Devices Meeting 1989, IEDM, Washington, D.C. December 3 - 6, 1989, page 903-905. Piscataway, New Jersey, IEEE, (1989)