Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

A 27 GHz 20 ps PNP technology

J. Warnock, P. Lu, T. Chen, K. Toh, J. Cressler, K. Jenkins, D. Tang, J. Burghartz, J. Sun, C. Chuang, G. Li, and T. Ning. Technical digest : International Electron Devices Meeting 1989, IEDM, Washington, D.C. December 3 - 6, 1989, page 903-905. Piscataway, New Jersey, IEEE, (1989)
DOI: 10.1109/IEDM.1989.74201

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

A. Laukemann

Allison Keith University of Stuttgart

Christopher Jenkins University of Stuttgart

A. Laukemann

A. Laukemann

Other publications of authors with the same name

Statistical Characterization and On-Chip Measurement Methods for Local Random Variability of a Process Using Sense-Amplifier-Based Test Structure.S. Mukhopadhyay, K. Kim, K. Jenkins, C. Chuang, and K. Roy. ISSCC, page 400-611. IEEE, (2007)On-Chip Circuit for Measuring Period Jitter and Skew of Clock Distribution Networks.K. Jenkins, K. Shepard, and Z. Xu. CICC, page 157-160. IEEE, (2007)A statistical critical path monitor in 14nm CMOS.B. Fleischer, C. Vezyrtzis, K. Balakrishnan, and K. Jenkins. ICCD, page 507-511. IEEE Computer Society, (2016)An On-Chip Test Structure and Digital Measurement Method for Statistical Characterization of Local Random Variability in a Process.S. Mukhopadhyay, K. Kim, K. Jenkins, C. Chuang, and K. Roy. J. Solid-State Circuits, 43 (9): 1951-1963 (2008)SiGe power HBT's for low-voltage, high-performance RF applicationsJ. Burghartz, J. Plouchart, K. Jenkins, C. Webster, and M. Soyuer. IEEE Electron Device Letters, 19 (4): 103-105 (April 1998)Spiral inductors and transmission lines in silicon technology using copper-damascene interconnects and low-loss substratesJ. Burghartz, D. Edelstein, K. Jenkins, and Y. Kwark. IEEE Transactions on Microwave Theory and Techniques, 45 (10): 1961-1968 (October 1997)Device design issues for a high-performance technology with Si or SiGe epitaxial baseJ. Burghartz, J. Cressler, K. Jenkins, J. Sun, J. Stork, J. Comfort, T. Brunner, and C. Stanis. Microelectronic Engineering, 15 (1-4): 11-14 (October 1991)Integrated RF And Microwave Components in BiCMOS TechnologyJ. Burghartz, M. Soyuer, and K. Jenkins. IEEE Transactions on Electron Devices, 43 (9): 1559-1570 (September 1996)High-performance emitter-up/down SiGe HBT'sJ. Burghartz, K. Jenkins, D. Grutzmacher, T. Sedgwick, and C. Stanis. IEEE Electron Device Letters, 15 (9): 360-362 (September 1994)Sub-30 Ps ECL Circuits Using High-F-Sub-T Si and SiGe Epitaxial Base TransistorsJ. Burghartz, J. Comfort, G. Patton, J. Cressler, B. Meyerson, J. Sun, G. Scilla, J. Warnock, B. Ginsberg, K. Jenkins and 3 other author(s). Electron Devices Meeting, 1990 : IEDM '90 : Technical Digest : International, page 297-300. Piscataway, New Jersey, IEEE, (1990)