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A 27 GHz 20 ps PNP technology

, , , , , , , , , , , and . Technical digest : International Electron Devices Meeting 1989, IEDM, Washington, D.C. December 3 - 6, 1989, page 903-905. Piscataway, New Jersey, IEEE, (1989)
DOI: 10.1109/IEDM.1989.74201

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Sub-30 Ps ECL Circuits Using High-F-Sub-T Si and SiGe Epitaxial Base Transistors, , , , , , , , , and 3 other author(s). Electron Devices Meeting, 1990 : IEDM '90 : Technical Digest : International, page 297-300. Piscataway, New Jersey, IEEE, (1990)Profile Leverage in Self-Aligned Epitaxial Si Or SiGe Base Bipolar Transistors, , , , , , , , , and 6 other author(s). Electron Devices Meeting, 1990 : IEDM '90 : Technical Digest : International, page 21-24. Piscataway, New Jersey, IEEE, (1990)A 27 GHz 20 ps PNP technology, , , , , , , , , and 2 other author(s). Technical digest : International Electron Devices Meeting 1989, IEDM, Washington, D.C. December 3 - 6, 1989, page 903-905. Piscataway, New Jersey, IEEE, (1989)