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Room-temperature electroluminescence from tensile strained double-heterojunction Germanium pin LEDs on Silicon substrates

, , , , , and . Solid-State Electronics, (2013)
DOI: 10.1016/j.sse.2013.01.041

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Approaches for III/V Photonics on Si, , , , , , , , , and . Physics of semiconductors : 30th International Conference on the Physics of Semiconductors . Seoul, Korea, 25 - 30 July 2010, 1399, page 261-262. Melville, New York, AIP, (2010)Ge-on-Si PIN-photodetectors with Al nanoantennas: The effect of nanoantenna size on light scattering into waveguide modes, , , , , , , , , and . Applied Physics Letters, (2016)Characterization of thin Boron layers grown on Silicon utilizing molecular beam epitaxy for ultra-shallow pn-junctions., and . MIPRO, page 7-11. IEEE, (2018)Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures., , , , , , , and . MIPRO, page 55-59. IEEE, (2021)Room Temperature Direct Band-Gap Emission from an Unstrained Ge P-I-N LED on Si, , , , , and . Gettering and Defect Engineering in Semiconductor Technology XIV : GADEST 2011, 178, page 25-30. Durnten, Trans Tech Publications, (2011)Small-signal IMPATT diode characterization for mm-wave power generation in monolithic scenarios, , , , , , and . 2016 46th European Solid-State Device Research Conference (ESSDERC), page 109-112. IEEE, (2016)Simulation-based optimization of Ge-PIN-photodiodes with Al nanohole arrays for refractive index sensing, , , , , and . 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 0023-0026. IEEE, (2018)Silicon tunneling field-effect transistors with tunneling in line with the gate field, , , , , , , and . IEEE Electron Device Letters, 34 (2): 154-156 (2013)Virtual Substrate Technology for Ge1-XSnX Heteroepitaxy on Si Substrates, , , , , , , , , and . ECS Transactions, 64 (6): 811-818 (2014)Very High Room-Temperature Peak-to-Valley Current Ratio in Si Esaki Tunneling Diodes (March 2010), , , , , , and . IEEE Transactions on Electron Devices, 57 (11): 2857-2863 (2010)