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Design of an Integrated Dual-Mode Interferometer on 250 nm Silicon-on-Insulator, , , , , , , , and . IEEE Journal of Selected Topics in Quantum Electronics, 23 (2): 444--451 (2017)Ge on Si p-i-n photodetectors with 40 GHz bandwidth, , , , , and . IEEE International Conference on Group IV Photonics, page 188--190. Sorrento, Italy, (2008)Monolithic Integration of Gesn on Si for IR Camera Demonstration, , , , , , , , and . ECS Meeting Abstracts, MA2022-02 (32): 1169 (October 2022)Franz-Keldysh effect in GeSn pin photodetectors, , , , , , , , , and 1 other author(s). Applied Physics Letters, 104 (16): 161115 (2014)Integrated polarization mode interferometer in 220-nm silicon-on-insulator technology, , , , , , , , , and . Optics letters, 47 (17): 4536-4539 (2022)High speed opto-electronic receiver with a 3-dB bandwidth of 22 GHz, , , , , , , , , and . International Symposium on Microwave and Optical Technology (ISMOT), page 202--205. Dresden, Germany, (2015)Subwavelength structures for advanced silicon photonic circuits, , , , , , , , and . Optische Komponenten für Cloud-Datacenter : XII. ITG-Workshop, Fachgruppe 5.3.2, ITG, Photonische Komponenten und Mikrosysteme, page 25-26. Göttingen, Cuvillier Verlag, (2015)Integrated Dual-Mode Interferometer with Differential Single-Mode Outputs, , , , , , , , and . European Conference on Integrated Optics (ECIO), page MP1.3. Eindhoven, The Netherlands, (2017)Ge-on-Si p-i-n Photodiodes With a 3-dB Bandwidth of 49 GHz, , , , and . IEEE Photonics Technology Letters, 21 (13): 920-922 (2009)Design of an Integrated Dual-Mode Interferometeron 250 nm Silicon-on-Insulator, , , , , , , , and . IEEE journal of selected topics in quantum electronics, 23 (2): 8200508 (2017)