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A high performance epitaxial SiGe-base ECL BiCMOS technology

, , , , , , , , , , , , , , , , and . Technical digest : International Electron Devices Meeting 1992 : San Francisco, CA, December 13 - 16, 1992, page 19-22. Piscataway, New Jersey, IEEE, (1992)
DOI: 10.1109/IEDM.1992.307299

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A high performance epitaxial SiGe-base ECL BiCMOS technology, , , , , , , , , and 7 other author(s). Technical digest : International Electron Devices Meeting 1992 : San Francisco, CA, December 13 - 16, 1992, page 19-22. Piscataway, New Jersey, IEEE, (1992)