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Temperature-dependent properties of single long-wavelength InGaAs quantum dots embedded in a strain reducing layer

, , , , , , , and . Journal of applied physics, 121 (18): 184302 (2017)
DOI: 10.1063/1.4983362

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Structural and optical properties of InAs/(In)GaAs/GaAs quantum dots with single-photon emission in the telecom C-band up to 77 K, , , , , , , , , and 6 other author(s). Physical review. B, Condensed matter and materials physics, 98 (12): 125407 (2018)Temperature-dependent properties of single long-wavelength InGaAs quantum dots embedded in a strain reducing layer, , , , , , , and . Journal of applied physics, 121 (18): 184302 (2017)Single-photon emission at 1.55 mu m from MOVPE-grown InAs quantum dots on InGaAs/GaAs metamorphic buffers, , , , , , , and . Applied physics letters, 111 (3): 033102 (2017)Polarization-entangled photons from an InGaAs-based quantum dot emitting in the telecom C-band, , , , , , , and . Applied physics letters, 111 (13): 133106 (2017)Single-photon and polarization-entangled photon emission from InAs quantum dots in the telecom C-band, , , , , , and . Nanophotonics VII, 10672, page 106720V. SPIE, (2018)Single-photon emission at 1.55 µm from MOVPE-grown InAs quantum dots on InGaAs/ GaAs metamorphic buffers, , , , , , , and . Applied Physics Letters, (July 2017)