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A 3-V 4-GHz nMOS voltage-controlled oscillator with integrated resonator

, , , and . IEEE Journal of Solid-State Circuits, 31 (12): 2042-2045 (December 1996)
DOI: 10.1109/4.545829

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An Integrated RF Transceiver For Short-Range, High-Speed Digital Communications in Tte U-NII 5.X GHz Band, , , , , , , , and . (1998)An 11 GHz 3-V SiGe voltage controlled oscillator with integrated resonator, , , , , , and . Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting, page 169-172. Piscataway, New Jersey, IEEE, (1996)A 3-V 4-GHz nMOS voltage-controlled oscillator with integrated resonator, , , and . IEEE Journal of Solid-State Circuits, 31 (12): 2042-2045 (December 1996)High-Q inductors in standard silicon interconnect technology and its application to an integrated RF power amplifier, , , and . Technical digest : International Electron Devices Meeting 1995, IEDM, Washington, DC, December 10-13, 1995, page 1015-1018. Piscataway, New Jersey, IEEE, (1995)Low-power multi-GHz and multi-Gb/s SiGe BiCMOS circuits., , , and . Proc. IEEE, 88 (10): 1572-1582 (2000)CMOS circuits for Gb/s serial data communication., , , , , and . IBM Journal of Research and Development, 39 (1-2): 73-82 (1995)Opportunities for Standard Silicon Technology in RF&Microwave Applications, , , , , , and . ESSDERC '95 : proceedings of the 25th European Solid State Device Research Conference, The Netherlands Congress Centre, The Hague, The Netherlands, 25th - 27th September 1995, page 363-367. Gif-sur-Yvette, Éditions Frontières, (1995)Multilevel Monolithic Inductors in Silicon Technology, , , , , and . Electronics Letters, 31 (5): 359-360 (March 1995)RF components implemented in an analog SiGe bipolar technology, , , , , , , and . Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting, page 138-141. Piscataway, New Jersey, IEEE, (1996)SiGe BiCMOS integrated circuits for high-speed serial communication links., , , , , , , , , and 2 other author(s). IBM Journal of Research and Development, 47 (2-3): 259-282 (2003)