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A SPICE Model for Silicon Photodiode, , , , and . (2007)High frequency behaviour of Ge pin junctions, , , , and . International Workshop on New Group IV Semiconductor Nanoelectronics, Digest of papers, page 1--3. Sendai, Japan, (2010)Photocurrent Analysis of a Fast Ge p-i-n Detector on Si, , , , and . Applied Physics Letters, 91 (5): 051108 (2007)Silicon Photonic Devices for Advanced Modulation Formats, , , , and . (2011)Germanium pin photodiodes on silicon and photonic integrated circuits. Universität Stuttgart, Dissertation, (2011)SiGe Bipolar Limiting Amplifier with a Bit Rate of 50 Gbit/s for Optoelectronic Receivers, , , and . Proceedings from the GigaHertz Symposium, page 18. Lund, Sweden, (2010)Ge on Si p-i-n photodetectors with 40 GHz bandwidth, , , , , and . IEEE International Conference on Group IV Photonics, page 188--190. Sorrento, Italy, (2008)Photonic crystal polarization beam splitter in Silicon-On-Insulator platform, , , and . Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), page 75--78. Berlin, Germany, (2010)Ge-on-Si p-i-n Photodiodes With a 3-dB Bandwidth of 49 GHz, , , , and . IEEE Photonics Technology Letters, 21 (13): 920-922 (2009)Ge on Si p-i-n photodiodes for a bit rate of up to 25 Gbit/s, , , , , , , and . European Conference on Optical Communication (ECOC), page 1--2. IEEE, (2009)