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Ge and GeSn Light Emitters on Si, , , , , , , , and . Gettering and Defect Engineering in Semiconductor Technology XVI, volume 242 of Solid State Phenomena, page 353-360. Trans Tech Publications, (2016)GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz, , , , , , , , , and 2 other author(s). Opt. Express, 22 (1): 839--846 (January 2014)Virtual Substrate Technology for Ge1-XSnX Heteroepitaxy on Si Substrates, , , , , , , , , and . ECS Transactions, 64 (6): 811-818 (2014)GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz, , , , , , , , , and 2 other author(s). Optics Express, 22 (1): 839-846 (2014)Direct bandgap narrowing in Ge LED's on Si substrates, , , , , , and . Optics Express, 21 (2): 2206-2211 (2013)Electroluminescence of GeSn/Ge MQW LEDs on Si substrate, , , , , , , , , and 2 other author(s). Opt. Lett., 40 (13): 3209--3212 (July 2015)Electrically pumped lasing from Ge Fabry-Perot resonators on Si, , , , , , , , and . Opt. Express, 23 (11): 14815--14822 (June 2015)Comparing Fourier transform infrared spectroscopy results with photocurrent measurements for Ge-on-Si PIN photodetectors with and without Al nanoantennas, , , , and . Journal of Applied Physics, (2020)Electroluminescence of GeSn/Ge MQW LEDs on Si substrate, , , , , , , , , and 2 other author(s). Optics letters, (2015)Absorption coefficients of GeSn extracted from PIN photodetector response, , , , , , , , , and . Solid-state electronics, (2015)