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PrxCa1-xMnO3-Based Memory and Si Time-Keeping Selector for Area and Energy Efficient Synapse

, , , , and . IEEE Electron Device Letters, 40 (6): 850-853 (2019)
DOI: 10.1109/LED.2019.2914406

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Approaches for III/V Photonics on Si, , , , , , , , , and . Physics of semiconductors : 30th International Conference on the Physics of Semiconductors . Seoul, Korea, 25 - 30 July 2010, 1399, page 261-262. Melville, New York, AIP, (2010)Ge-on-Si PIN-photodetectors with Al nanoantennas: The effect of nanoantenna size on light scattering into waveguide modes, , , , , , , , , and . Applied Physics Letters, (2016)Characterization of thin Boron layers grown on Silicon utilizing molecular beam epitaxy for ultra-shallow pn-junctions., and . MIPRO, page 7-11. IEEE, (2018)Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures., , , , , , , and . MIPRO, page 55-59. IEEE, (2021)Ultra-Low Energy LIF Neuron Using Si NIPIN Diode for Spiking Neural Networks, , and . IEEE electron device letters, 39 (12): 1832-1835 (2018)The Zener-Emitter : Electron injection by direct-tunneling in Ge LEDs for the on-chip Si light source, , , , , , , , , and . 2016 74th Annual Device Research Conference (DRC), page 1-2. IEEE, (2016)Virtual Substrate Technology for Ge1-XSnX Heteroepitaxy on Si Substrates, , , , , , , , , and . ECS Transactions, 64 (6): 811-818 (2014)Very High Room-Temperature Peak-to-Valley Current Ratio in Si Esaki Tunneling Diodes (March 2010), , , , , , and . IEEE Transactions on Electron Devices, 57 (11): 2857-2863 (2010)Structure and composition of Silicon-Germanium-Tin microstructures obtained through Mask Projection assisted Pulsed Laser Induced Epitaxy, , , , , , , , , and . Microelectronic Engineering, (2014)Structural and vibrational properties of SnxGe1-x : modeling and experiments, , , , and . Journal of applied physics, 124 (3): 035105- (2018)