Author of the publication

Untersuchung des Rauschens in komplementären Metall-Oxid-Halbleiter-Ringoszillatoren

. Universität Stuttgart, Dissertation, (2007)
DOI: 10.18419/opus-2626

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Filter structure and method for filtering an input signal, and . (2008)Single Sideband Transmission Employing a 1-to-4 ADC Frontend and Parallel Digitization, invited paper, , , , , , , and . Journal of Lightwave Technology, 38 (12): 3125--3134 (2020)Parasitic Extraction for Silicon MOSFETs, , , , and . International IEEE MTT/AP Workshop on MMIC Design, Packaging, and System Applications, page 23--24. Freiburg, Germany, Fraunhofer Inst. for Applied Solid State Physics, (1998)A 2 Gbit/s 0.18um CMOS front-end amplifier for integrated differential photodiodes, , , and . Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SIRF). Digest of Papers, page 361--364. San Diego, CA, USA, (2005)A Viterbi Equalizer Chip for 40 Gb/s Optical Communication Links, , , , and . European Microwave Conference (EuMC), page 49--52. Nuremberg, Germany, (2013)A 6 bit and a 7 bit 80 MS/s SAR ADC for an IR-UWB receiver, , , , , , , and . IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), page 1--4. Tel Aviv, Israel, (2011)Ge on Si p-i-n photodiodes for a bit rate of up to 25 Gbit/s, , , , , , , and . European Conference on Optical Communication (ECOC), page 1--2. IEEE, (2009)Design of a 4 GS/s radix-1.75 single channel pipeline ADC in 28 nm CMOS technology with foreground calibration, , and . International Symposium on Integrated Circuits (ISIC), page 87--90. Singapore, (2014)CMOS ring oscillator with quadrature outputs and 100 MHz to 3.5 GHz tuning range, , and . European Solid-State Circuits Conference (ESSCIRC), page 679--682. Estoril, Portugal, (2003)A 112-GS/s 1-to-4 ADC front-end with more than 35-dBc SFDR and 28-dB SNDR up to 43-GHz in 130-nm SiGe BiCMOS, , , , , , , and . IEEE Radio Frequency Integrated Circuits Symposium (RFIC), page 215--218. Boston, MA, USA, (2019)