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Disambiguation of "Ginsberg, Barry J."

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Selective Epitaxial Refill for In-Trench Device Fabrication

, , , and . Electronics Letters, 25 (20): 1337-1338 (Sep 28, 1989)
DOI: 10.1049/el:19890893

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J. K\"astner

J. Schwarz

J. K\"astner

J Walter

J. Vogel

 

Other publications of authors with the same name

Selective epitaxial growth of silicon and some potential applications, , , and . IBM Journal of Research and Development, 34 (6): 816-827 (November 1990)Selective Epitaxy Base for Bipolar Transistors, , , , and . ESSDERC 88 : 18th European Solid State Device Research Conference, September 13 - 16, 1988, Montpellier (France), page C4-367-C4-370. Piscataway, New Jersey, IEEE, (1988)Perimeter and plug effects in deep sub-micron polysilicon emitter bipolar transistors, , , , and . Digest of Technical Papers : 1990 Symposium on VLSI Technology, page 55-56. Piscataway, New Jersey, IEEE, (1990)Selective Epitaxial Refill for In-Trench Device Fabrication, , , and . Electronics Letters, 25 (20): 1337-1338 (Sep 28, 1989)Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technology, , , , , , , and . IEEE Transactions on Electron Devices, 38 (2): 378-385 (February 1991)Self-aligned bipolar npn transistor with 60 nm epitaxial base, , , , , and . Technical digest : International Electron Devices Meeting 1989, IEDM, Washington, D.C. December 3 - 6, 1989, page 229-232. Piscataway, New Jersey, IEEE, (1989)Sub-30 Ps ECL Circuits Using High-F-Sub-T Si and SiGe Epitaxial Base Transistors, , , , , , , , , and 3 other author(s). Electron Devices Meeting, 1990 : IEDM '90 : Technical Digest : International, page 297-300. Piscataway, New Jersey, IEEE, (1990)New Technology for Bipolar Emitters in the Deep Sub-Micron Range, , and . (1989)Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology, , , , , , , , and . IEEE Electron Device Letters, 11 (7): 288-290 (July 1990)