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Si Esaki diodes with high peak to valley current ratios, , , , , , and . Applied Physics Letters, 95 (24): 242109 (2009)Franz–Keldysh effect of germanium-on-silicon p–i–n diodes within a wide temperature range, , , , , , and . Thin Solid Films, (December 2012)Antimony doped Si Esaki diodes without post growth annealing, , , , , and . Sixth International Conference on Silicon Epitaxy and Heterostructures, 518, 6, Supplement 1, page S65-S67. Amsterdam, Elsevier, (2010)Germanium photodetectors on Silicon-on-insulator grown with differential molecular beam epitaxy in silicon wells, , , , and . Solid-State Electronics, 60 (1): 105-111 (2011)Germanium on Silicon Photodetectors with Broad Spectral Range, , , , , , , and . Journal of The Electrochemical Society, 157 (2): H144 (2010)GeSn p-i-n detectors integrated on Si with up to 4% Sn, , , , , , and . Applied Physics Letters, 101 (14): 141110 (2012)Very High Room-Temperature Peak-to-Valley Current Ratio in Si Esaki Tunneling Diodes (March 2010), , , , , , and . IEEE Transactions on Electron Devices, 57 (11): 2857-2863 (2010)Franz-Keldysh effect of germanium-on-silicon p-i-n diodes within a wide temperature range, , , , , , and . Thin Solid Films, (2012)Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy, , , , , , and . Applied Physics Letters, 98 (6): 061108 (2011)High speed opto-electronic receiver with a 3-dB bandwidth of 22 GHz, , , , , , , , , and . International Symposium on Mircowave and OPtical Technology Proceedings, (2015)