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Umeda","T. Enoki","K. Osafune","H. Ito","Y. Ishii" ], "authors": [ {"first" : "Y.", "last" : "Umeda"}, {"first" : "T.", "last" : "Enoki"}, {"first" : "K.", "last" : "Osafune"}, {"first" : "H.", "last" : "Ito"}, {"first" : "Y.", "last" : "Ishii"} ], "volume": "44","number": "12","pages": "2361-2368","abstract": "Sixty-GHz-band two-stage monolithic low-noise amplifiers and ultrahigh-speed SCFL static frequency dividers have been fabricated using the same InAlAs/InGaAs/InP HEMT process. This process assures uniformity by taking advantage of a 0.1-/spl mu/m T-shaped gate and an InP recess-etch stopper. Circuits are designed with priorities on stable operation, high yield, and uniformity. For the low-noise amplifier, the stabilization is optimized so as to minimize noise for the design gain while maintaining stability at all frequencies. The resultant amplifiers show a fabrication yield of 75% and at 62 GHz have a noise figure of 4.3/spl plusmn/0.19 dB and a gain of 11.8/spl plusmn/0.25 dB. For the frequency divider, the load resistance is set to be large enough to assure stable operation (circuit simulation shows that increasing the load resistance has little effect on the maximum toggle frequency). Frequency dividers designed with the optimum load resistance for stable and high-speed operation show a fabrication yield of 63% and have a maximum toggle frequency of 36.7/spl plusmn/0.55 GHz. These results demonstrate the feasibility of using this HEMT process to monolithically integrate analog and digital circuits on one chip.", "date-added" : "2020-11-22 12:18:38 +0100", "bdsk-url-1" : "https://doi.org/10.1109/22.554560", "issn" : "1557-9670", "date-modified" : "2020-11-22 12:18:53 +0100", "doi" : "10.1109/22.554560", "bibtexKey": "Umeda_MTT1996" } , { "type" : "Publication", "id" : "https://puma.ub.uni-stuttgart.de/bibtex/2f55d679162f54b4867f021453bdeca5e/ingmarkallfass", "tags" : [ "(THz)","10.2","100","300.0","GHz;bit","Gbit/s;InGaAs;Complex","Gbit/s;bit","MIMIC;gallium","amplitude","analogue-digital","applications;wireless","arbitrary","arsenide;HEMT","binary","channels;terahertz","circuits;IEEE","circuits;InGaAs","circuits;modems;quadrature","circuits;multichannel","communication","communication;high","communications;wireless","components;monolithic","compounds;millimetre","configuration;receiver;fast","conversion;binary","converters;frequency","converters;multichannel","data","data;transmission","distances;complex","effect","electron","frequency;baseband","generator;carrier","generators;wireless","high","integrated","link;low","link;pseudorandom","link;terahertz","links;radio","metamorphic","millimeter","mobility","modulated","modulation;millimeter","modulation;radio","monolithic","point-to-point","range;all-electronic","rate","rates;64-QAM;THz","receivers;terahertz","semiconductors;indium","sequences;analog-to-digital","sequences;field","sequences;superheterodyne","signal;digital","signals;16-QAM;32-QAM;baseband","standard;wireless","standards;III-V","technology;IEEE","terahertz","transistor","transmission;channel","transmission;radio","transmissions;modems;superheterodyne","transmitters;random","wave","waveform","waves;waveform","wireless" ], "intraHash" : "f55d679162f54b4867f021453bdeca5e", "interHash" : "5ca0c0cfc7e3cd02e6f6ae1d3451e58d", "label" : "A Terahertz Wireless Communication Link Using a Superheterodyne Approach", "user" : "ingmarkallfass", "description" : "", "date" : "2020-09-07 14:26:58", "changeDate" : "2025-05-26 10:46:15", "count" : 3, "pub-type": "article", "journal": "IEEE Transactions on Terahertz Science and Technology", "year": "2020", "url": "", "author": [ "I. Dan","G. Ducournau","S. Hisatake","P. Szriftgiser","R. Braun","I. Kallfass" ], "authors": [ {"first" : "I.", "last" : "Dan"}, {"first" : "G.", "last" : "Ducournau"}, {"first" : "S.", "last" : "Hisatake"}, {"first" : "P.", "last" : "Szriftgiser"}, {"first" : "R.", "last" : "Braun"}, {"first" : "I.", "last" : "Kallfass"} ], "volume": "10","number": "1","pages": "32-43","abstract": "This article presents a wireless communication point-to-point link operated in the low terahertz (THz) range, at a center frequency of 300 GHz. The link is composed of all-electronic components based on monolithic millimeter wave integrated circuits fabricated in an InGaAs metamorphic high electron mobility transistor technology. Different configurations and architectures are compared and analyzed. The superheterodyne approach proves to be the most promising of all, being compliant with the new IEEE standard for 100 Gb/s wireless transmissions and showing compatibility to accessible, already available modems. The first option of realizing the superheterodyne configuration is by combining the 300-GHz transmitter and receiver with of-the-shelf up and down converters operating at a center frequency of 10 GHz. In this case, data rates of up to 24 Gb/s are achieved. The second option employs a fast arbitrary waveform generator that uses a carrier frequency to up-convert the baseband data. In this case, data rates of up to 60 Gb/s and transmission distances of up to 10 m are achieved with complex modulated signals like 16-QAM and 32-QAM. The baseband signal is composed of pseudo-random binary sequences and is analyzed offline using fast analog to digital converters. In superheterodyne configuration, multichannel transmission is demonstrated. Channel data rates of 10.2 Gb/s using 64-QAM are achieved. The successful transmission of aggregated channels in this configuration shows the potential of THz communication for future high data rate applications.", "date-added" : "2020-02-22 19:04:27 +0100", "bdsk-url-1" : "https://doi.org/10.1109/TTHZ.2019.2953647", "issn" : "2156-3446", "date-modified" : "2020-11-03 13:05:51 +0100", "doi" : "10.1109/TTHZ.2019.2953647", "bibtexKey": "Dan_TTHz2020" } , { "type" : "Publication", "id" : "https://puma.ub.uni-stuttgart.de/bibtex/23fa029a141b1b397baa1d705f14f66e7/ingmarkallfass", "tags" : [ "(MMIC)","Field","analysis;Logic","and","circuit","circuits","circuits;microwave","devices","devices;microwave","effect","frequency","gates;MMICs;Millimeter","integrated","millimeter-wave","monolithic","multipliers;III--V","multipliers;millimeter-microwave","transistors;Harmonic","transistors;Topology;GaAs","wave" ], "intraHash" : "3fa029a141b1b397baa1d705f14f66e7", "interHash" : "a5c6bccf65495d3b9274fb79d2e7043b", "label" : "A Miniaturized Unit Cell for Ultra-Broadband Active Millimeter-Wave Frequency Multiplication", "user" : "ingmarkallfass", "description" : "", "date" : "2020-09-07 14:26:58", "changeDate" : "2025-05-26 10:46:15", "count" : 2, "pub-type": "article", "journal": "Microwave Theory and Techniques, IEEE Transactions on", "year": "2014", "url": "", "author": [ "U.J. Lewark","S. Diebold","S. Wagner","A. Tessmann","A. Leuther","T. Zwick","I. Kallfass" ], "authors": [ {"first" : "U.J.", "last" : "Lewark"}, {"first" : "S.", "last" : "Diebold"}, {"first" : "S.", "last" : "Wagner"}, {"first" : "A.", "last" : "Tessmann"}, {"first" : "A.", "last" : "Leuther"}, {"first" : "T.", "last" : "Zwick"}, {"first" : "I.", "last" : "Kallfass"} ], "volume": "62","number": "6","pages": "1343--1351","abstract": "A compact broadband unit cell for the design of broadband frequency multipliers is presented. Based on design methods from moderate frequencies, a novel integrated balanced field-effect transistor architecture is introduced, pushing ultra-broadband balanced frequency multiplication into the high millimeter-wave range. The realized microwave monolithic integrated circuits (MMICs) using this topology provide second harmonic generation over several decades using only a single integrated transistor unit cell. The circuits are fabricated in a metamorphic HEMT technology for convenient integration into multifunctional MMICs and achieve relative bandwidths of 199\\% from 60 MHz to 80 GHz and 70.1\\% in \\$D\\$- and \\$G\\$-band (110--170 and 140--220 GHz).", "bdsk-url-1" : "https://doi.org/10.1109/TMTT.2014.2318272", "issn" : "0018-9480", "doi" : "10.1109/TMTT.2014.2318272", "bibtexKey": "Lewark_MTT2014" } ] }