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%0 Journal Article
%1 burghartz1991device
%A Burghartz, Joachim N.
%A Cressler, John D.
%A Jenkins, Keith A.
%A Sun, Jack Yuan-Chen
%A Stork, Johannes M. C.
%A Comfort, James H.
%A Brunner, Timothy A.
%A Stanis, Carol L.
%C Amsterdam
%D 1991
%I Elsevier
%J Microelectronic Engineering
%K INES
%N 1-4
%P 11-14
%R 10.1016/0167-9317(91)90172-A
%T Device design issues for a high-performance technology with Si or SiGe epitaxial base
%U https://doi.org/10.1016/0167-9317(91)90172-A
%V 15
@article{burghartz1991device,
added-at = {2019-04-12T10:25:21.000+0200},
address = {Amsterdam},
author = {Burghartz, Joachim N. and Cressler, John D. and Jenkins, Keith A. and Sun, Jack Yuan-Chen and Stork, Johannes M. C. and Comfort, James H. and Brunner, Timothy A. and Stanis, Carol L.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2f8e0a9a389975c318909ddbedf53613c/kevin.konnerth},
doi = {10.1016/0167-9317(91)90172-A},
interhash = {f61ff71f8308e133a4a8d5eaddd29e28},
intrahash = {f8e0a9a389975c318909ddbedf53613c},
issn = {0167-9317},
journal = {Microelectronic Engineering},
keywords = {INES},
month = oct,
number = {1-4},
pages = {11-14},
publisher = {Elsevier},
timestamp = {2019-04-12T08:35:44.000+0200},
title = {Device design issues for a high-performance technology with Si or SiGe epitaxial base},
url = {https://doi.org/10.1016/0167-9317(91)90172-A},
volume = 15,
year = 1991
}