%0 Journal Article %1 hahnel2011germanium %A Hähnel, D. %A Oehme, Michael %A Sarlija, M. %A Karmous, A. %A Schmid, M. %A Werner, J. %A Kirfel, O. %A Fischer, Inga A. %A Schulze, Jörg %D 2011 %I Elsevier BV %J Solid-State Electronics %K %N 1 %P 132-137 %R 10.1016/j.sse.2011.03.011 %T Germanium vertical Tunneling Field-Effect Transistor %V 62

@article{hahnel2011germanium, added-at = {2023-08-31T16:21:20.000+0200}, author = {Hähnel, D. and Oehme, Michael and Sarlija, M. and Karmous, A. and Schmid, M. and Werner, J. and Kirfel, O. and Fischer, Inga A. and Schulze, Jörg}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/27db40c9688ab1b89f1e704bf8aa6be84/puma-wartung}, doi = {10.1016/j.sse.2011.03.011}, interhash = {e205edcfecb0f5f44487159a25b9d775}, intrahash = {7db40c9688ab1b89f1e704bf8aa6be84}, issn = {0038-1101}, journal = {Solid-State Electronics}, keywords = {}, language = {eng}, number = 1, pages = {132-137}, publisher = {Elsevier BV}, timestamp = {2023-08-31T14:21:20.000+0200}, title = {Germanium vertical Tunneling Field-Effect Transistor}, volume = 62, year = 2011 }