%0 Journal Article %1 SCHWARZBACK2013208 %A Schwarzbäck, Thomas %A Kahle, Hermann %A Jetter, Michael %A Michler, Peter %D 2013 %J Journal of Crystal Growth %K ihfg %P 208 - 211 %R https://doi.org/10.1016/j.jcrysgro.2012.09.051 %T Strain compensation techniques for red AlGaInP-VECSELs: Performance comparison of epitaxial designs %U http://www.sciencedirect.com/science/article/pii/S0022024812008421 %V 370 %X We present a strain-compensation design for non-resonantly pumped vertical external cavity surface-emitting lasers for emission in the red spectral range around 665nm. Here, the VECSEL chip is based on a metal-organic vapor-phase epitaxy grown (GaxIn1−x)0.5P0.5/(AlxGa1−x)yIn 1−y0.5P0.5 multi-quantum-well structure with 20 compressively strained quantum wells. By introducing tensile strained quaternary barriers and cladding layers in a 5×4 QW design, we could compensate for the compressive strain introduced by the quantum wells. Photoluminenscence measurements of structures with different numbers of quantum well packages reveal a more homogenous quantum well growth due to the strain-compensation technique. Furthermore, with the strain compensation technique, the output power could be increased over 30% compared to our conventional structures.

@article{SCHWARZBACK2013208, abstract = {We present a strain-compensation design for non-resonantly pumped vertical external cavity surface-emitting lasers for emission in the red spectral range around 665nm. Here, the VECSEL chip is based on a metal-organic vapor-phase epitaxy grown (GaxIn1−x)0.5P0.5/[(AlxGa1−x)yIn 1−y]0.5P0.5 multi-quantum-well structure with 20 compressively strained quantum wells. By introducing tensile strained quaternary barriers and cladding layers in a 5×4 QW design, we could compensate for the compressive strain introduced by the quantum wells. Photoluminenscence measurements of structures with different numbers of quantum well packages reveal a more homogenous quantum well growth due to the strain-compensation technique. Furthermore, with the strain compensation technique, the output power could be increased over 30% compared to our conventional structures.}, added-at = {2018-06-21T18:30:22.000+0200}, author = {Schwarzbäck, Thomas and Kahle, Hermann and Jetter, Michael and Michler, Peter}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/281eb20c1785ba6b9bcd2e47f40a902f2/thomas_herzog}, description = {Strain compensation techniques for red AlGaInP-VECSELs: Performance comparison of epitaxial designs - ScienceDirect}, doi = {https://doi.org/10.1016/j.jcrysgro.2012.09.051}, interhash = {cfc0d710ea6d8cf53de103b0b9b0d61a}, intrahash = {81eb20c1785ba6b9bcd2e47f40a902f2}, issn = {0022-0248}, journal = {Journal of Crystal Growth}, keywords = {ihfg}, note = {16th International Conference on Metalorganic Vapor Phase Epitaxy}, pages = {208 - 211}, timestamp = {2018-06-21T16:30:22.000+0200}, title = {Strain compensation techniques for red AlGaInP-VECSELs: Performance comparison of epitaxial designs}, url = {http://www.sciencedirect.com/science/article/pii/S0022024812008421}, volume = 370, year = 2013 }