%0 Journal Article %1 oehme2012detectors %A Oehme, Michael %A Schmid, M. %A Kaschel, M. %A Gollhofer, M. %A Widmann, D. %A Kasper, Erich %A Schulze, Jörg %D 2012 %I American Institute of Physics %J Applied Physics Letters %K %N 14 %P 141110 %R 10.1063/1.4757124 %T GeSn p-i-n detectors integrated on Si with up to 4% Sn %V 101 %X GeSn heterojunction photodetectors on Si substrates were grown with Sn concentration up to 4%, fabricated for vertical light incidence, and characterized. The complete layer structure was grown by means of ultra low temperature (100 °C) molecular beam epitaxy. The Sn content shifts the responsivity into the infrared, about 310 nm for the 4% Sn sample. An increase of the optical responsivity for wavelengths higher than 1550 nm can be observed with increasing Sn content. At 1600 nm, the optical responsivity is increased by more than a factor of 10 for the GeSn diode with 4% Sn in comparison to the Ge reference diode.

@article{oehme2012detectors, abstract = {GeSn heterojunction photodetectors on Si substrates were grown with Sn concentration up to 4%, fabricated for vertical light incidence, and characterized. The complete layer structure was grown by means of ultra low temperature (100 °C) molecular beam epitaxy. The Sn content shifts the responsivity into the infrared, about 310 nm for the 4% Sn sample. An increase of the optical responsivity for wavelengths higher than 1550 nm can be observed with increasing Sn content. At 1600 nm, the optical responsivity is increased by more than a factor of 10 for the GeSn diode with 4% Sn in comparison to the Ge reference diode.}, added-at = {2023-08-31T16:21:07.000+0200}, author = {Oehme, Michael and Schmid, M. and Kaschel, M. and Gollhofer, M. and Widmann, D. and Kasper, Erich and Schulze, Jörg}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2f5d557ffe9acd2fab03781bd22326efe/puma-wartung}, doi = {10.1063/1.4757124}, interhash = {cdaf69419bfc6f09d18aefae2d945e59}, intrahash = {f5d557ffe9acd2fab03781bd22326efe}, issn = {0003-6951}, journal = {Applied Physics Letters}, keywords = {}, language = {eng}, number = 14, pages = 141110, publisher = {American Institute of Physics}, timestamp = {2023-08-31T14:21:07.000+0200}, title = {GeSn p-i-n detectors integrated on Si with up to 4% Sn}, volume = 101, year = 2012 }