%0 Journal Article %1 oehme2009esaki %A Oehme, Michael %A Hähnel, D. %A Werner, J. %A Kaschel, M. %A Kirfel, O. %A Kasper, Erich %A Schulze, Jörg %D 2009 %I AIP Publishing %J Applied Physics Letters %K %N 24 %P 242109 %R 10.1063/1.3274136 %T Si Esaki diodes with high peak to valley current ratios %V 95 %X We report room temperature current voltage characteristics of Si p+-i-n+ Esaki diodes integrated on silicon substrates. The diodes were fabricated by low-temperature molecular beam epitaxy. Very high and abrupt p- and n-type dopant transitions into the 1020 cm−3 ranges are achieved by boron and antimony, respectively. The integrated devices are realized without a postgrowth annealing step. The silicon Esaki diodes show negative differential resistance at room temperature with excellent peak to valley current ratios up to 3.94. A variation in the thickness of the silicon tunneling barrier changes the peak current density over three orders of magnitude.

@article{oehme2009esaki, abstract = {We report room temperature current voltage characteristics of Si p+-i-n+ Esaki diodes integrated on silicon substrates. The diodes were fabricated by low-temperature molecular beam epitaxy. Very high and abrupt p- and n-type dopant transitions into the 1020 cm−3 ranges are achieved by boron and antimony, respectively. The integrated devices are realized without a postgrowth annealing step. The silicon Esaki diodes show negative differential resistance at room temperature with excellent peak to valley current ratios up to 3.94. A variation in the thickness of the silicon tunneling barrier changes the peak current density over three orders of magnitude.}, added-at = {2023-08-31T14:58:43.000+0200}, author = {Oehme, Michael and Hähnel, D. and Werner, J. and Kaschel, M. and Kirfel, O. and Kasper, Erich and Schulze, Jörg}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/28378907bb42fe5a8bbffb833c73a8f60/puma-wartung}, doi = {10.1063/1.3274136}, interhash = {c7e4d4b114cfb239e634ae0fdae66011}, intrahash = {8378907bb42fe5a8bbffb833c73a8f60}, issn = {{0003-6951} and {1077-3118}}, journal = {Applied Physics Letters}, keywords = {}, language = {eng}, number = 24, pages = 242109, privnote = {doi: 10.1063/1.3274136}, publisher = {AIP Publishing}, timestamp = {2023-08-31T12:58:43.000+0200}, title = {Si Esaki diodes with high peak to valley current ratios}, volume = 95, year = 2009 }