Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy
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2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), Seite 1-6. IEEE, (2019)

Theoretical simulations predict that direct band transitions are favored in Germanium-Lead (GePb) alloys with Pb concentrations of cPb Ĭ 3.4%. This could enable the creation of semiconductor lasers that are directly structured on Ge substrates. However, the formation of alloys with these properties is hindered by the low equilibrium solubility of Pb in Ge. Therefore, the usage of out-ofequilibrium growth methods, such as pulsed laser induced epitaxy (PLIE), is necessary. The contribution focusses on the formation of GePb alloys with varying Pb concentrations.
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