Inproceedings,

Precise Voltage Measurement for Power Electronics with High Switching Frequencies

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PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, page 1-6. (June 2018)

Abstract

In this paper different approaches in precise measurement of gate voltages as well as drain-source voltages of modern SiC and GaN transistors are compared. An approach to calculate the necessary bandwidth of a voltage probe to reproduce the voltage slope is presented. Furthermore, state-ofthe- art voltage probes are compared in means of bandwidth, common mode reduction and response on EMI.

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