%0 Journal Article %1 elogail2018enhancement %A Elogail, Yasmine %A Fischer, Inga A. %A Wendav, Torsten %A Schulze, Jörg %D 2018 %I Institute of Physics Publ. %J Semiconductor science and technology %K %N 11 %P 114001 %R 10.1088/1361-6641/aae001 %T Enhancement of Ge-based p-channel vertical FET performance by channel engineering using planar doping and a Ge/SixGe1-x-ySny heterostructure model for low power FET applications %V 33

@article{elogail2018enhancement, added-at = {2023-08-31T16:38:52.000+0200}, affiliation = {Elogail, Y (Reprint Author), Univ Stuttgart, Inst Halbleitertech IHT, Stuttgart, Germany. Elogail, Yasmine; Fischer, Inga A.; Schulze, Joerg, Univ Stuttgart, Inst Halbleitertech IHT, Stuttgart, Germany. Wendav, Torsten, Humboldt Univ, Inst Phys, AG Theoret Opt \& Photon, Berlin, Germany.}, author = {Elogail, Yasmine and Fischer, Inga A. and Wendav, Torsten and Schulze, Jörg}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2dc01b60c829e4e385c4079a1dee1787a/puma-wartung}, doi = {10.1088/1361-6641/aae001}, interhash = {8c2812958ecfd8fbf6e2b1265ae29536}, intrahash = {dc01b60c829e4e385c4079a1dee1787a}, issn = {{0268-1242} and {1361-6641}}, journal = {Semiconductor science and technology}, keywords = {}, language = {eng}, number = 11, orcid-numbers = {Elogail, Yasmine/0000-0002-8793-9373}, pages = 114001, publisher = {Institute of Physics Publ.}, research-areas = {Engineering; Materials Science; Physics}, timestamp = {2023-08-31T14:38:52.000+0200}, title = {Enhancement of Ge-based p-channel vertical FET performance by channel engineering using planar doping and a Ge/SixGe1-x-ySny heterostructure model for low power FET applications}, unique-id = {ISI:000446823600001}, volume = 33, year = 2018 }