Abstract
Vertical external-cavity surface-emitting lasers (VECSELs) provide in principle power scalability at constant beam quality and vast wavelength flexibility. However, due to the limited charge-carrier confinement in AlGaInP-based VECSELs, an optimized heat conduction is essential in order to enable power scalability. Unfortunately, the substrate and the distributed Bragg reflector in such VECSELs show a low thermal conductivity. Hence, an additional intra-cavity diamond or silicon carbide heat spreader is inevitable to overcome occurring temperature problems. A modified chip holder that mechanically improve the thermal contact between gain element and heat spreader showed already a doubling of the maximum output power compared to the standard one. However, recent thermal and laser measurements have shown that the heat transfer out of the heat spreader is still hampered by bottlenecks at the transitions between different parts of the gain chip holder, limiting the power scaling ability. A new chip-holder was designed to overcome these thermal problems. Its design as well as results of AlGaInP VECSELs emitting at 665 nm will be presented.
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