Inproceedings,

(Si)GeSn nanostructures for optoelectronic device applications

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2016 39th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 1-4. Piscataway, NJ, IEEE, (2016)
DOI: 10.1109/MIPRO.2016.7522099

Abstract

We present an overview of recent results on the fabrication of GeSn- and SiGeSn-nanostructures for optoelectronic device application.

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