%0 Conference Paper %1 schwartz2016analysis %A Schwartz, Bernhard %A Saring, Philipp %A Arguirov, Tzanimir %A Oehme, Michael %A Kostecki, Konrad %A Kasper, Erich %A Schulze, Joerg %A Kittler, Martin %B Gettering and Defect Engineering in Semiconductor Technology XVI %C Pfaffikon %D 2016 %I Trans Tech Publications %K %N 242 %P 361-367 %R 10.4028/www.scientific.net/SSP.242.361 %T Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers %X We analyzed multi quantum well light emitting diodes, consisting of ten alternating GeSn/Ge-layers, were grown by molecular beam epitaxy on Si. The Ge barriers were 10 nm thick and the GeSn wells were grown with 7% Sn and thicknesses between 6 and 12 nm. Despite the high threading dislocation density of 109 to 1010 cm−2 the electroluminescence spectra measured at 300 and 80 K yield a broad and intensive luminescence band. Deconvolution revealed three major lines produced by the GeSn wells that can be interpreted in terms of quantum confinement. Biaxial compressive strain causes a splitting of light and heavy holes in the GeSn wells. We interpret the three lines to represent two direct lines, formed by transitions with the light and heavy hole band, respectively, andan indirect line. %@ 978-3-03835-608-0 and 978-3-03859-398-0 and 978-3-0357-0083-1

@inproceedings{schwartz2016analysis, abstract = {We analyzed multi quantum well light emitting diodes, consisting of ten alternating GeSn/Ge-layers, were grown by molecular beam epitaxy on Si. The Ge barriers were 10 nm thick and the GeSn wells were grown with 7% Sn and thicknesses between 6 and 12 nm. Despite the high threading dislocation density of 109 to 1010 cm−2 the electroluminescence spectra measured at 300 and 80 K yield a broad and intensive luminescence band. Deconvolution revealed three major lines produced by the GeSn wells that can be interpreted in terms of quantum confinement. Biaxial compressive strain causes a splitting of light and heavy holes in the GeSn wells. We interpret the three lines to represent two direct lines, formed by transitions with the light and heavy hole band, respectively, andan indirect line.}, added-at = {2023-08-31T16:01:22.000+0200}, address = {Pfaffikon}, author = {Schwartz, Bernhard and Saring, Philipp and Arguirov, Tzanimir and Oehme, Michael and Kostecki, Konrad and Kasper, Erich and Schulze, Joerg and Kittler, Martin}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/28ac20dc874f435591dd8a1e39a42e9ae/puma-wartung}, booktitle = {Gettering and Defect Engineering in Semiconductor Technology XVI}, doi = {10.4028/www.scientific.net/SSP.242.361}, eventdate = {2015-09-20/2015-09-25}, eventtitle = {Gettering and Defect Engineering in Semiconductor Technology XVI (GADEST 2015)}, interhash = {3978f5d831241731cf639114d006a66e}, intrahash = {8ac20dc874f435591dd8a1e39a42e9ae}, isbn = {{978-3-03835-608-0} and {978-3-03859-398-0} and {978-3-0357-0083-1}}, keywords = {}, language = {eng}, number = 242, pages = {361-367}, publisher = {Trans Tech Publications}, series = {Solid State Phenomena}, timestamp = {2023-08-31T14:01:22.000+0200}, title = {Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers}, venue = {Bad Staffelstein, Germany}, year = 2016 }