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Electrical Characterization of pure Boron-on-Germanium pin Diodes

, , , und . 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), Seite 13-18. (Mai 2019)

Zusammenfassung

Pure Boron on Germanium deposition was successfully performed using Molecular Beam Epitaxy to form ultra-shallow pin diodes. In order to form the pure Boron on Germanium heterojunction, a 100 nm thick highly Antimony doped Germanium layer was grown on a highly Arsenic doped Silicon(001) wafer by using Molecular Beam Epitaxy. Afterwards, a 5 min annealing step at 830 °C is performed to form a virtual, defect-less Germanium substrate. Growth is then continued with 300 nm of intrinsic Germanium layer. Finally, a few nanometers of Boron were deposited at a temperature of 400 °C. A maximum Boron deposition temperature of 400 °C allows the transfer of this technology to a Back End-of-Line process. A Complementary Metal-Oxide-Semiconductor-compatible fabrication process was utilized afterwards to fabricate single mesa diodes out of the grown layer stacks. The diodes show high ideality, low series resistance and low dark currents.

Links und Ressourcen

DOI:
10.23919/MIPRO.2019.8757123
URL:
BibTeX-Schlüssel:
8757123
Suchen auf:

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