Adopting the BSIM3 Model to Describe the DC-IV Characteristics of a Vertical Power MOSFET
L. Yan, and I. Kallfass. 2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC), page 1885-1890. Piscataway, NJ, IEEE, (2018)
DOI: 10.1109/PEAC.2018.8590317
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%0 Conference Paper
%1 yan2018adopting
%A Yan, Lixi
%A Kallfass, Ingmar
%B 2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC)
%C Piscataway, NJ
%D 2018
%I IEEE
%K
%P 1885-1890
%R 10.1109/PEAC.2018.8590317
%T Adopting the BSIM3 Model to Describe the DC-IV Characteristics of a Vertical Power MOSFET
%@ 978-1-5386-6054-6
@inproceedings{yan2018adopting,
added-at = {2023-08-31T16:36:54.000+0200},
address = {Piscataway, NJ},
affiliation = {Yan, LX (Reprint Author), Univ Stuttgart, Inst Robust Power Semicond Syst, Stuttgart, Germany.
Yan, Lixi; Kallfass, Ingmar, Univ Stuttgart, Inst Robust Power Semicond Syst, Stuttgart, Germany.},
author = {Yan, Lixi and Kallfass, Ingmar},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/29f76af79386c6e10cc25047c19128fb6/puma-wartung},
booktitle = {2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC)},
doi = {10.1109/PEAC.2018.8590317},
eventdate = {2018-11-04/2018-11-07},
eventtitle = {IEEE International Power Electronics and Application Conference and Exposition (IEEE PEAC)},
interhash = {2ef9d6b80847ddb68c86cfb7d76f08b7},
intrahash = {9f76af79386c6e10cc25047c19128fb6},
isbn = {978-1-5386-6054-6},
keywords = {},
language = {eng},
pages = {1885-1890},
publisher = {IEEE},
research-areas = {Engineering},
timestamp = {2023-08-31T14:36:54.000+0200},
title = {Adopting the BSIM3 Model to Describe the DC-IV Characteristics of a Vertical Power MOSFET},
unique-id = {ISI:000468167900334},
venue = {Shenzhen, China},
year = 2018
}
