%0 Conference Paper %1 8956731 %A Köllner, Ann-Christin %A Yu, Zili %A Oehme, Michael %A Anders, Jens %A Kaschel, Mathias %A Schulze, Jörg %A Burghartz, Joachim N. %B 2019 IEEE SENSORS %D 2019 %K iht j.schulze.iht journal professional_meetings %P 1-4 %R 10.1109/SENSORS43011.2019.8956731 %T A 2x2 Pixel Array Camera based on a Backside Illuminated Ge-on-Si Photodetector %X This paper proposes a new concept of a Near-Infrared (NIR) micro-system camera with a backside illuminated Germanium-on-Silicon (Ge-on-Si) photodetector. The performance of this photodetector is analyzed and compared to frontside illuminated Ge-on-Si photodetectors. An enhanced responsivity of 0.4 A/W at 1310 nm for the backside illuminated diode is achieved, which is equal to commercial solutions. With the help of zero-biasing, the critical dark current density can be reduced by more than a factor of 80 000 compared to standard biasing with -1 V. By using a backside illuminated diode, reflections of the metal layer are eliminated and the pixel fill factor is increased. Additionally, a proof of concept micro-system with a 2 × 2 pixel array of Ge-on-Si backside illuminated photodetectors and a custom readout ASIC is demonstrated. This proves the functionality of the proposed photodetector and readout concept for NIR camera applications.

@inproceedings{8956731, abstract = {This paper proposes a new concept of a Near-Infrared (NIR) micro-system camera with a backside illuminated Germanium-on-Silicon (Ge-on-Si) photodetector. The performance of this photodetector is analyzed and compared to frontside illuminated Ge-on-Si photodetectors. An enhanced responsivity of 0.4 A/W at 1310 nm for the backside illuminated diode is achieved, which is equal to commercial solutions. With the help of zero-biasing, the critical dark current density can be reduced by more than a factor of 80 000 compared to standard biasing with -1 V. By using a backside illuminated diode, reflections of the metal layer are eliminated and the pixel fill factor is increased. Additionally, a proof of concept micro-system with a 2 × 2 pixel array of Ge-on-Si backside illuminated photodetectors and a custom readout ASIC is demonstrated. This proves the functionality of the proposed photodetector and readout concept for NIR camera applications.}, added-at = {2021-11-11T12:32:55.000+0100}, author = {Köllner, Ann-Christin and Yu, Zili and Oehme, Michael and Anders, Jens and Kaschel, Mathias and Schulze, Jörg and Burghartz, Joachim N.}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/244f72ca96690d690dbc1dfe202c9d178/ihtpublikation}, booktitle = {2019 IEEE SENSORS}, description = {A 2x2 Pixel Array Camera based on a Backside Illuminated Ge-on-Si Photodetector | IEEE Conference Publication | IEEE Xplore}, doi = {10.1109/SENSORS43011.2019.8956731}, interhash = {2935d5216dbce7ce929d2f19e8e1cd01}, intrahash = {44f72ca96690d690dbc1dfe202c9d178}, issn = {2168-9229}, keywords = {iht j.schulze.iht journal professional_meetings}, month = oct, pages = {1-4}, timestamp = {2021-11-11T12:27:23.000+0100}, title = {A 2x2 Pixel Array Camera based on a Backside Illuminated Ge-on-Si Photodetector}, year = 2019 }